Thermal behavior of laser‐annealed GaAs studied by helium backscattering spectroscopy-Reference-Cited by-同舟云学术

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Thermal behavior of laser‐annealed GaAs studied by helium backscattering spectroscopy

Published:1980-11-15 Issue:10 Volume:37 Page:948-950
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Amano J.,Pianetta P. A.,Stolte C. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.91771

Reference7 articles.

1. Nonalloyed ohmic contacts to electron‐beam‐annealed Se‐ion‐implanted GaAs

2. Electrical properties of laser-annealed donor-implanted GaAs

3. Pulsed‐laser annealing of implanted layers in GaAs

4. Effect of Si3N4 encapsulation on the laser-annealing behaviour of GaAs

5. Pulsed electron‐beam annealing of selenium‐implanted gallium arsenide

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chapter 1 Active Layer Formation by Ion Implantation;Semiconductors and Semimetals;1990

2. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989

3. Rapid Thermal Processing for High-Speed III-V Compound Devices;MRS Proceedings;1987

4. Chapter 2 Ion Implantation and Materials for GaAs Integrated Circuits;Semiconductors and Semimetals;1984

5. Laser Induced Ohmic Conduction in Gallium Arsenide;Cohesive Properties of Semiconductors under Laser Irradiation;1983

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