Chapter 2 Ion Implantation and Materials for GaAs Integrated Circuits
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Elsevier
Reference140 articles.
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2. Electrostatic and current transport properties ofn+/semi‐insulating GaAs junctions;Journal of Applied Physics;1993-10
3. Melt-Growth of Iii–V Compounds by the Liquid Encapsulation and Horizontal Growth Techniques;Materials Processing: Theory and Practices;1989
4. Status of device-qualified GaAs substrate technology for GaAs integrated circuits;Proceedings of the IEEE;1988-07
5. Chemical trends in lattice location of implanted impurities in AIII BV compounds;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1987-12
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