Electrical detection of <i>T</i><sub>V2a</sub>-type silicon vacancy spin defect in 4H-SiC MOSFETs-Reference-Cited by-同舟云学术

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Electrical detection of T_V2a-type silicon vacancy spin defect in 4H-SiC MOSFETs

Published:2022-02-07 Issue:6 Volume:120 Page:064001
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Abe Yuta¹²^ORCID,Chaen Akihumi¹,Sometani Mitsuru³^ORCID,Harada Shinsuke³,Yamazaki Yuichi²^ORCID,Ohshima Takeshi¹²^ORCID,Umeda Takahide¹^ORCID

Affiliation:

1. Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573, Japan

2. National Institutes for Quantum Science and Technology (QST), Takasaki 370-1292, Japan

3. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8569, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0078189

Reference27 articles.

1. Magnetometry with nitrogen-vacancy defects in diamond

2. Quantum entanglement between an optical photon and a solid-state spin qubit

3. Realization of three-qubit quantum error correction with superconducting circuits

4. Single-Shot Readout of a Single Nuclear Spin

5. Silicon carbide color centers for quantum applications

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nature of electrically detected magnetic resonance in highly nitrogen-doped 6H -SiC single crystals;Physical Review B;2024-09-09

2. Differences between Polar-Face and Non-Polar Face 4H-SiC/SiO<sub>2 </sub>Interfaces Revealed by Magnetic Resonance Spectroscopy;Defect and Diffusion Forum;2024-08-22

3. Enhancing the electrical readout of the spin-dependent recombination current in SiC JFETs for EDMR based magnetometry using a tandem (de-)modulation technique;Scientific Reports;2024-06-20

4. Investigation of CMOS Single Process Steps on 4H-SiC a-Plane Wafers for Quantum Applications;2024 47th MIPRO ICT and Electronics Convention (MIPRO);2024-05-20

5. Energy levels of carbon dangling-bond center (PbC center) at 4H-SiC(0001)/SiO2 interface;APL Materials;2023-11-01

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