Characterization of Si/Si1−xGex/Si heterostructures by capacitance‐transient spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357332
Reference14 articles.
1. The determination of valence band discontinuities in Si/Si1−xGex/Si heterojunctions by capacitance‐voltage techniques
2. Mid-gap level in SiGe alloys
3. Photoluminescence and electrical characterization of SiGe/Si heterostructures grown by rapid thermal chemical vapour deposition
4. Capacitance and conductance deep level transient spectroscopy in field‐effect transistors
5. Deep-level transient spectroscopy (DLTS) analysis of defect levels in semiconductor alloys
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1. Si/SiGe heterostructures for advanced microelectronic devices;Phase Transitions;2008-07
2. Analysis of the Leakage Current Origin in Thin Strain Relaxed Buffer Substrates;Journal of The Electrochemical Society;2006
3. Hole trapping in self-assembled SiGe quantum nanostructures;Materials Science and Engineering: B;2003-08
4. Point Defects in Relaxed Si1-xGex Alloy Layers;MRS Proceedings;1998-01
5. Electronic Properties and Deep Levels in Germanium-Silicon;Semiconductors and Semimetals;1998
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