Hole trapping in self-assembled SiGe quantum nanostructures-Reference-Cited by-同舟云学术

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Hole trapping in self-assembled SiGe quantum nanostructures

Published:2003-08 Issue:1-3 Volume:101 Page:338-344
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Volpi F.,Peaker A.R.,Hawkins I.D.,Halsall M.P.,Kenway P.B.,Portavoce A.,Ronda A.,Berbezier I.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. Nucleation and evolution of Si1−xGex islands on Si(001)

2. Structural, Compositional and Optical Properties of Self-Organised Ge Quantum Dots

3. The determination of valence band discontinuities in Si/Si1−xGex/Si heterojunctions by capacitance‐voltage techniques

4. Characterization of Si/Si1−xGex/Si heterostructures by capacitance‐transient spectroscopy

5. Deep-level transient spectroscopy study of narrow SiGe quantum wells with high Ge content

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Stranski–Krastanov growth of (Si)Ge/Si(001): transmission electron microscopy compared with segregation theory;Materials Science and Technology;2018-04-02

2. Capacitance spectroscopy of CdTe self-assembled quantum dots embedded in ZnTe matrix;Physica B: Condensed Matter;2009-12

3. Si/SiGe heterostructures for advanced microelectronic devices;Phase Transitions;2008-07

4. Advances in the growth and characterization of Ge quantum dots and islands;Journal of Materials Research;2005-12-01

5. Self-Assembled Si1-x Ge x Dots and Islands;Nanostructure Science and Technology

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