Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122935
Reference12 articles.
1. Hall measurements and contact resistance in doped GaN/AlGaN heterostructures
2. High transconductance heterostructure field‐effect transistors based on AlGaN/GaN
3. The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various Temperatures
4. Attenuation Length Measurements of Hot Electrons in Metal Films
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