Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model-Reference-Cited by-同舟云学术

Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model

Published:2017-01-28 Issue:4 Volume:121 Page:045701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Greco Giuseppe¹^ORCID,Giannazzo Filippo¹^ORCID,Roccaforte Fabrizio¹^ORCID

Affiliation:

1. Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII n. 5- Zona industriale, 95121 Catania, Italy

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4974868

Reference43 articles.

1. Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications

2. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

3. Challenges for energy efficient wide band gap semiconductor power devices

4. AlGaN/GaN HEMT With 300-GHz $f_{\max}$

5. Wide Energy Bandgap Electronic Devices

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