A novel method of selective epitaxial growth of InP by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339682
Reference11 articles.
1. Selective MOCVD epitaxy for optoelectronic devices
2. GaAs/GaAlAs selective MOCVD epitaxy and planar ion-implantation technique for complex integrated optoelectronic circuit applications
3. Selective metalorganic chemical vapour deposition for GaAs planar technology
4. Selective MOCVD growth of GaAlAs on partly masked substrates and its application to optoelectronic devices
5. Selective area growth of gallium arsenide by metalorganic vapor phase epitaxy
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1. Thickness inhomogeneities and growth mechanisms of GaP heteroepitaxy by organometallic chemical vapor deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2010-07
2. Analytical solution of thickness variations in selective area growth by organometallic chemical vapor deposition;Applied Physics Letters;2009-06-22
3. Non-planar and masked-area epitaxy by organometallic chemical vapour deposition;Semiconductor Science and Technology;1993-06-02
4. Selective area growth of InGaAsP by OMVPE;Journal of Crystal Growth;1992-09
5. Current status of selective area epitaxy by OMCVD;Journal of Crystal Growth;1992-05
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