Epitaxial growth of CuInS2 on sulphur terminated Si(001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121074
Reference21 articles.
1. Limiting efficiencies of ideal single and multiple energy gap terrestrial solar cells
2. Solar cells based on CuInSe2 and related compounds: recent progress in Europe
3. CuInS2based thin film solar cell with 10.2% efficiency
4. $\bf In_{2}O_{3}/CdS/CuInS_{2}$ Thin-Film Solar Cell with 9.7% Efficiency
5. Properties of CuInS2 thin films grown by a two-step process without H2S
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1. Unveiling the role of copper content in the crystal structure and phase stability of epitaxial Cu(In,Ga)S2 films on GaP/Si(001);Materials Science in Semiconductor Processing;2023-11
2. Efficient passivation of n-type and p-type silicon surface defects by hydrogen sulfide gas reaction;Journal of Physics: Condensed Matter;2021-09-03
3. Remarkable quality improvement of as-grown monolayer MoS2 by sulfur vapor pretreatment of SiO2/Si substrates;Nanoscale;2020
4. Surface Defect Passivation and Reaction of c-Si in H2S;Langmuir;2017-12-12
5. Epitaxial growth of CuGaSe 2 thin-films by MBE—Influence of the Cu/Ga ratio;Applied Surface Science;2017-09
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