Efficient passivation of n-type and p-type silicon surface defects by hydrogen sulfide gas reaction
Author:
Funder
Solar Energy Technologies Office
U.S. DOE Office of Science User Facility
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
https://iopscience.iop.org/article/10.1088/1361-648X/ac1ec8/pdf
Reference36 articles.
1. Achievement of More Than 25% Conversion Efficiency With Crystalline Silicon Heterojunction Solar Cell
2. Development of Heterojunction Back Contact Si Solar Cells
3. Toward the Practical Limits of Silicon Solar Cells
4. Balancing optimization and innovation
5. n-Type Si solar cells with passivating electron contact: Identifying sources for efficiency limitations by wafer thickness and resistivity variation
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1. Atomic and molecular functionalisation of technological materials: an introduction to nanoscale processes on semiconductor surfaces;Journal of Physics: Condensed Matter;2022-03-25
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