Properties of CuInS2 thin films grown by a two-step process without H2S-Reference-Cited by-同舟云学术

Properties of CuInS2 thin films grown by a two-step process without H2S

Published:1997-12 Issue:1-4 Volume:49 Page:349-356
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Klenk R.,Blieske U.,Dieterle V.,Ellmer K.,Fiechter S.,Hengel I.,Jäger-Waldau A.,Kampschulte T.,Kaufmann Ch.,Klaer J.,Lux-Steiner M.Ch.,Braunger D.,Hariskos D.,Ruckh M.,Schock H.W.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Device and material characterization of Cu(InGa)Se2 solar cells with increasing band gap

2. T. Walter, D. Braunger, D. Hariskos, Ch. Köble, H.W. Schock, Proc. 13th European PVSEC.

3. CuInS2based thin film solar cell with 10.2% efficiency

4. Proc. 25th IEEE PVSC;Braunger,1996

5. $\bf In_{2}O_{3}/CdS/CuInS_{2}$ Thin-Film Solar Cell with 9.7% Efficiency

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