Device and material characterization of Cu(InGa)Se2 solar cells with increasing band gap-Reference-Cited by-同舟云学术

Device and material characterization of Cu(InGa)Se2 solar cells with increasing band gap

Published:1996-05-01 Issue:9 Volume:79 Page:7324-7328
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Shafarman William N.¹,Klenk Reiner¹,McCandless Brian E.¹

Affiliation:

1. Institute of Energy Conversion, University of Delaware, United States Department of Energy, University Center of Excellence For Photovoltaics Research and Education (National Renewable Energy Laboratory), Newark, Delaware 19716

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference14 articles.

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2. J. Hedstrom, H. Ohlsen, M. Bodegard, A. Kylner, L. Stolt, D. Hariskos, M. Ruckh, and H. W. Schock, in Proceedings of the 23rd IEEE Photovoltaic Specialists Conference, Louisville, KY (Institute of Electrical and Electronics Engineers, New York, 1993), p. 364.

3. J. R. Tuttle, M. A. Contreras, T. J. Gillespie, K. R. Ramanathan, A. L. Tennant, J. Keane, A. M. Gabor and R. Noufi, Prog. PV Res. Appl. 3, 235 (1995).

4. H. W. Schock, in Proceedings of the 12th European Photovoltaic Solar Energy Conference, Amsterdam, The Netherlands (H. S. Stephens, London, 1994), p. 944.

5. J. M. Stewart, W. S. Chen, W. E. Devaney, and R. A. Mickelsen, in Proceedings of the 7th International Conference on Ternary and Multinary Compounds, edited by S. K. Deb and A. Zunger (Materials Research Society, Pittsburgh, 1987), p. 59.

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