Effects of NiO on electrical properties of NiAu-based ohmic contacts for p-type GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125564
Reference13 articles.
1. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes
2. High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
3. Dependence of electrical properties on work functions of metals contacting to p-type GaN
4. Ohmic Contacts for Compound Semiconductors
5. Temperature Behavior of Pt/Au Ohmic Contacts to p-GaN
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