Determination of band profiles in GaN films using hard X-ray photoelectron spectroscopy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=2/a=021003/pdf
Reference38 articles.
1. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
2. Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures
3. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
4. Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon
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1. Impact of oxygen on band structure at the Ni/GaN interface revealed by hard X-ray photoelectron spectroscopy;Applied Physics Letters;2021-03-22
2. Interface properties of SiO2/GaN structures formed by chemical vapor deposition with remote oxygen plasma mixed with Ar or He;Japanese Journal of Applied Physics;2018-05-10
3. High thermal stability of abrupt SiO2/GaN interface with low interface state density;Japanese Journal of Applied Physics;2018-03-05
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