Infrared and x-ray photoelectron spectroscopy studies of as-prepared and furnace-annealed radio-frequency sputtered amorphous silicon carbide films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367299
Reference22 articles.
1. Electrical and optical properties of amorphous silicon carbide, silicon nitride and germanium carbide prepared by the glow discharge technique
2. A study of visible-light injection-electroluminescence in a-SiC/p-i-n diode
3. Structural properties of amorphous silicon carbide films by plasma‐enhanced chemical vapor deposition
4. The effect of hydrogen content on the optoelectronic properties of amorphous silicon‐carbide films
5. Optical and Electrical Properties of Hydrogenated Amorphous Silicon Carbide
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