Glide velocities of Si-core partial dislocations for double-Shockley stacking fault expansion in heavily nitrogen-doped SiC during high-temperature annealing-Reference-Cited by-同舟云学术

Glide velocities of Si-core partial dislocations for double-Shockley stacking fault expansion in heavily nitrogen-doped SiC during high-temperature annealing

Published:2018-07-14 Issue:2 Volume:124 Page:025705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tokuda Y.¹²^ORCID,Kamata I.³,Miyazawa T.³,Hoshino N.³,Kato T.⁴,Okumura H.⁴^ORCID,Kimoto T.²,Tsuchida H.³

Affiliation:

1. DENSO CORPORATION, 500-1 Minamiyama, Komenoki, Nisshin, Aichi 470-0111, Japan

2. Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan

3. Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan

4. National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5031896

Reference38 articles.

1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices

2. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices

3. Material science and device physics in SiC technology for high-voltage power devices

4. Investigation of heavily nitrogen-doped n+ 4H–SiC crystals grown by physical vapor transport

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