Impact of bottom electrode and SrxTiyOz film formation on physical and electrical properties of metal-insulator-metal capacitors-Reference-Cited by-同舟云学术

Impact of bottom electrode and SrxTiyOz film formation on physical and electrical properties of metal-insulator-metal capacitors

Published:2011-05-02 Issue:18 Volume:98 Page:182902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Pawlak M. A.,Kaczer B.,Kim M.-S.,Popovici M.,Swerts J.,Wang W.-C.,Opsomer K.,Favia P.,Tomida K.,Belmonte A.,Govoreanu B.,Vrancken C.,Demeurisse C.,Bender H.,Afanas’ev V. V.,Debusschere I.,Altimime L.,Kittl J. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3584022

Reference9 articles.

1. High-k dielectrics for future generation memory devices (Invited Paper)

2. Atomic Layer Deposition and Electrical Properties of SrTiO[sub 3] Thin Films Grown Using Sr(C[sub 11]H[sub 19]O[sub 2])[sub 2], Ti(Oi-C[sub 3]H[sub 7])[sub 4], and H[sub 2]O

3. Enhanced electrical properties of SrTiO3 thin films grown by atomic layer deposition at high temperature for dynamic random access memory applications

4. Atomic Layer Deposition of Strontium Titanate Films Using Sr([sup t]Bu[sub 3]Cp)[sub 2] and Ti(OMe)[sub 4]

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