Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3259659
Reference17 articles.
1. Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes
2. High-speed 1.3μm tunnel injection quantum-dot lasers
3. Simultaneous two-state lasing in quantum-dot lasers
4. Low transparency current density and high temperature operation from ten-layer p-doped 1.3μm InAs∕InGaAs∕GaAs quantum dot lasers
5. Impact of intraband relaxation on the performance of a quantum-dot laser
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1. Numerical investigation on self-heating effect in 1.3 µm quantum dot photonic crystal microstructure VCSELs;The European Physical Journal Plus;2022-04
2. The role of wetting layer and QD-layers on the performance of 1.3 µm QD-VCSEL;Applied Physics B;2022-03-28
3. Analysis of the optical feedback dynamics in InAs/GaAs quantum dot lasers directly grown on silicon;Journal of the Optical Society of America B;2018-10-12
4. Intensity noise behavior of an InAs/InGaAs quantum dot laser emitting on ground states and excited states;Optics Letters;2018-02-14
5. Control of transient gain absorption via tunneling and incoherent pumping in triple quantum dots;Laser Physics;2016-12-07
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