Low transparency current density and high temperature operation from ten-layer p-doped 1.3μm InAs∕InGaAs∕GaAs quantum dot lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2434156
Reference20 articles.
1. Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laser
2. Low-threshold high-T/sub 0/ 1.3-/spl mu/m InAs quantum-dot lasers due to p-type modulation doping of the active region
3. InAs∕InGaAs∕GaAs quantum dot lasers of 1.3 [micro sign]m range with high (88%) differential efficiency
4. High-Frequency Modulation Characteristics of 1.3->tex<$muhboxm$>/tex<InGaAs Quantum Dot Lasers
5. High-speed 1.3μm tunnel injection quantum-dot lasers
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