The role of surface pretreatment by low temperature O2 gas annealing for β-Ga2O3 Schottky barrier diodes-Reference-Cited by-同舟云学术

The role of surface pretreatment by low temperature O₂ gas annealing for β-Ga₂O₃ Schottky barrier diodes

Published:2022-02-14 Issue:7 Volume:120 Page:073501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hu Haodong¹^ORCID,Feng Ze²^ORCID,Wang Yibo¹^ORCID,Liu Yan¹^ORCID,Dong Hong²^ORCID,Liu Yue-Yang³^ORCID,Hao Yue¹,Han Genquan¹⁴^ORCID

Affiliation:

1. School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China

2. Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin 300350, People's Republic of China

3. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China

4. Hangzhou Institute of Technology, Xidian University, Hangzhou 311231, People's Republic of China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0080343

Reference48 articles.

1. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

2. Deep-ultraviolet transparent conductive β-Ga2O3 thin films