Bipolar resistive switching behavior of La0.5Sr0.5CoO3−σ films for nonvolatile memory applications-Reference-Cited by-同舟云学术

Bipolar resistive switching behavior of La0.5Sr0.5CoO3−σ films for nonvolatile memory applications

Published:2014-06-02 Issue:22 Volume:104 Page:223505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fu Y. J.¹,Xia F. J.²,Jia Y. L.¹,Jia C. J.¹,Li J. Y.¹,Dai X. H.¹,Fu G. S.¹,Zhu B. Y.²,Liu B. T.¹

Affiliation:

1. Hebei Provincial Key Laboratory of Optoelectronic Information Materials, and College of Physics Science and Technology, Hebei University, Hebei 071002, China

2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China

Funder

National Natural Science Foundation of China (NSFC)

National Natural Science Foundation of China

Natural Science Foundation of Hebei Province

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4881720

Reference32 articles.

1. BISTABLE SWITCHING IN NIOBIUM OXIDE DIODES

2. Effect of carrier trapping on the hysteretic current-voltage characteristics inAg∕La0.7Ca0.3MnO3∕Ptheterostructures

3. Evidence for an Oxygen Diffusion Model for the Electric Pulse Induced Resistance Change Effect in Transition-Metal Oxides

4. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3

5. Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode

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