Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3039809
Reference21 articles.
1. Nanoionics-based resistive switching memories
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5. Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode
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