Study of interfacial defects induced during the oxidation of ultrathin strained silicon layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3137202
Reference30 articles.
1. Uniaxial-process-induced strained-Si: extending the CMOS roadmap
2. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
3. Si/SiGe heterostructures: from material and physics to devices and circuits
4. Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors
5. Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of thermal oxidation on the interfacial properties of ultrathin strained silicon layers;Thin Solid Films;2011-06
2. Effects of Growth and Surface Cleaning Conditions on Strain Relaxation on SiGe Films beyond a Critical Thickness on Si(001) Substrate;ECS Transactions;2010-10-01
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