Metal–oxide–semiconductor devices using Ga2O3 dielectrics on n-type GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1584520
Reference10 articles.
1. Trapping effects and microwave power performance in AlGaN/GaN HEMTs
2. AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor
3. AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz
4. Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition
5. Low interface trap density for remote plasma deposited SiO2 on n‐type GaN
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