Epitaxial regrowth of Ne‐ and Kr‐implanted amorphous silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.324416
Reference5 articles.
1. Gas release studies of silicon implanted with low energy He+and Kr+ions
2. Comparative study of annealed neon‐, argon‐, and krypton‐ion implantation damage in silicon
3. Stopping cross sections and backscattering factors for 4He ions in matter Z = 1–92,
4. Reordering of amorphous layers of Si implanted with31P,75As, and11B ions
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