Gas release studies of silicon implanted with low energy He+and Kr+ions
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337577108231090
Reference22 articles.
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2. On the mechanisms of diffusion in inert-gas bombarded solids. Diffusion theory for discrete media, part V
3. A gas-release study of the annealing of bombardment-induced disorder∗ (studies on bombardment-induced disorder—I)
4. Ion bombardment induced phase transformations and inert gas mobility in the semiconductors Ge, Si, and GaAs
5. Investigations into the mechanism of trapping of inert gas ions in polycrystalline tungsten
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1. Defect evolution in ultralow energy, high dose helium implants of silicon performed at elevated temperatures;Journal of Applied Physics;2018-10-28
2. Noble Gas Inclusions in Materials;Heterogeneous Chemistry Reviews;1996-09
3. Positron annihilation studies of defects in helium-irradiated silicon;Physics Letters A;1990-11
4. On the Trapping and Thermal Release of Low Energy Noble Gases Implanted into Silicon;MRS Proceedings;1988
5. The desorption behaviour of implanted noble gases at low energy on silicon surfaces;Surface Science;1987-08
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