Ion bombardment induced phase transformations and inert gas mobility in the semiconductors Ge, Si, and GaAs
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337577008235621
Reference51 articles.
1. Damage to Silicon Produced by Bombardment with Helium Ions
2. Conversion of crystalline germanium to amorphous germanium by ion bombardment
3. ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING
4. Mazey, D. J., Nelson, R. S. and Barnes, R. S. 1967. Harwell Report AERE-R 5623
5. MacRae, A. U. 1968. personal communication
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