Thin film crystal growth of Si on fused silica: Effects of growth front dynamics on crystallography
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331801
Reference19 articles.
1. Growth of single‐crystal silicon islands on bulk fused silica by CO2laser annealing
2. Dynamics of CO2laser heating in the processing of silicon
3. The Optical Constants of Some Oxide Glasses in the Strong Absorption Region
4. Quantitative Determination of the Carrier Concentration Distribution in Semiconductors by Scanning IR Absorption: Si
5. Theoretical considerations regarding pulsed CO2 laser annealing of silicon
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1. In SituMicroscopic Observations of Melting of Thin Si Film Induced by CW Ar-Ion Laser Oscillating in Various Modes;Japanese Journal of Applied Physics;1991-09-15
2. Artificial Epitaxy (Graphoepitaxy);Oriented Crystallization on Amorphous Substrates;1991
3. A laser-recrystallization technique for silicon-TFT integrated circuits on quartz substrates and its application to small-size monolithic active-matrix LCD's;IEEE Transactions on Electron Devices;1990
4. Temperature distributions and molten zones induced by heating with line‐shaped electron beams;Journal of Applied Physics;1989-09-15
5. Direct observation of growth front movement in electron beam recrystallization of silicon layer on insulator;Applied Physics Letters;1987-04-13
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