Exciton photoluminescence linewidths in very narrow AlGaAs/GaAs and GaAs/InGaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342027
Reference9 articles.
1. Growth and characterization of high-quality MOCVD AlGaAs/GaAs single quantum wells
2. Theory of photoluminescence line shape due to interfacial quality in quantum well structures
3. Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruption
4. Atomic steps at GaInAs/InP interfaces grown by organometallic vapor phase epitaxy
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1. Photoluminescence Characterization of Structural and Electronic Properties of Semiconductor Quantum Wells;Characterization of Semiconductor Heterostructures and Nanostructures;2013
2. Accessing structural and electronic properties of semiconductor nanostructures via photoluminescence;Characterization of Semiconductor Heterostructures and Nanostructures;2008
3. Correlation between luminescence properties of AlxGa1−xAs∕GaAs single quantum wells and barrier composition fluctuation;Journal of Applied Physics;2007-06
4. Resonant photonic band gap structures realized from molecular-beam-epitaxially grown InGaAs∕GaAs Bragg-spaced quantum wells;Journal of Applied Physics;2006-09-15
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