Atomic steps at GaInAs/InP interfaces grown by organometallic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99652
Reference20 articles.
1. 1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy
2. Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm
3. Low loss InGaAs/InP multiple quantum well waveguides
4. InGaAsP/InP quantum well modulators grown by gas source molecular beam epitaxy
5. Growth of Ga0.47In0.53As‐InP quantum wells by low pressure metalorganic chemical vapor deposition
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1. Material parameters of InGaAsP and InAlGaAs systems for use in quantum well structures at low and room temperatures;Physica E: Low-dimensional Systems and Nanostructures;2000-03
2. Characterization of interfacial structure of InGaAs/InP short‐period superlattices by high resolution x‐ray diffraction and Raman scattering;Journal of Applied Physics;1995-02-15
3. Gas source molecular beam epitaxy and X-ray absorption fine structure characterization of InGaAs/InP short period superlattices;Journal of Crystal Growth;1994-03
4. Tailored heterointerface formation in InGaAs/InP superlattices by gas source migration-enhanced epitaxy;Applied Surface Science;1994-01
5. Observation by electroabsorption of strain‐enhanced interface roughening in GaxIn1−xAs/Ga0.22In0.78As0.48P0.52quantum wells prepared by gas‐source molecular beam epitaxy;Journal of Applied Physics;1993-09-15
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