The effect of InGaAs strain-reducing layer on the optical properties of InAs quantum dot chains grown on patterned GaAs(100)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3675271
Reference27 articles.
1. Polarization-entangled photons produced with high-symmetry site-controlled quantum dots
2. Modeling and simulation for a nano-photonic quantum dot waveguide fabricated by DNA-directed self-assembly
3. Growth of three-dimensional quantum dot crystals on patterned GaAs (001) substrates
4. Focused ion beam implantation induced site-selective growth of InAs quantum dots
5. New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates
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2. Size anisotropy inhomogeneity effects in state-of-the-art quantum dot lasers;Applied Physics Letters;2018-07-02
3. Theoretical study on the electronic and optical properties of bulk and surface (001) In x Ga 1-x As;Physica B: Condensed Matter;2018-05
4. Incorporating structural analysis in a quantum dot Monte-Carlo model;Novel In-Plane Semiconductor Lasers XVII;2018-02-19
5. Carrier dynamics of strain-engineered InAs quantum dots with (In)GaAs surrounding material;Journal of Optics;2017-01-16
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