Theoretical study on the electronic and optical properties of bulk and surface (001) In x Ga 1-x As-Reference-Cited by-同舟云学术

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Theoretical study on the electronic and optical properties of bulk and surface (001) In x Ga 1-x As

Published:2018-05 Issue: Volume:537 Page:68-76
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Liu XueFei,Ding Zhao,Luo ZiJiang,Zhou Xun,Wei JieMin,Wang Yi,Guo Xiang,Lang QiZhi

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. The effect of InGaAs strain-reducing layer on the optical properties of InAs quantum dot chains grown on patterned GaAs(100);Hakkarainen;J. Appl. Phys.,2012

2. High optical sensitivity to ambient conditions of uncapped InGaAs surface quantum dots;Milla;Appl. Phys. Lett.,2012

3. 2.6 μm MBE grown InGaAs detectors with dark current of SRH and TAT;Ji;AIP Adv.,2014

4. Electrically pumped continuous-wave 1.3 mum quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si;Liu;Opt. Lett.,2017

5. III-V multijunction solar cells for concentrating photovoltaics;Cotal;Energy Environ. Sci.,2009

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2. First-principle investigation of TlGaAs alloys for band detection in SWIR region;Indian Journal of Physics;2022-02-21

3. The effect of biaxial tensile strain on structure and photoelectric properties of Fe-doped GaN monolayer;Computational Materials Science;2021-09

4. The Study on Structural and Photoelectric Properties of Zincblende InGaN via First Principles Calculation;Crystals;2020-12-19

5. First principles calculations on theoretical band gap improvement of IIIA-VA zinc-blende semiconductor InAs;International Journal of Modern Physics C;2020-10-09

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