Study of the annealing kinetic effect and implantation energy on phosphorus-implanted silicon wafers using spectroscopic ellipsometry
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2207688
Reference21 articles.
1. Evolution from point to extended defects in ion implanted silicon
2. Cross‐section transmission electron microscopy study of carbon‐implanted layers in silicon
3. Optical properties of N+ ion-implanted and rapid thermally annealed Si(100) wafers studied by spectroscopic ellipsometry
4. Spectroscopic ellipsometry study of ion-implanted Si(100) wafers
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2. Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation;International Journal of Thermophysics;2014-04-18
3. Optical and photo-carrier characterization of ultra-shallow junctions in silicon;Science China Physics, Mechanics and Astronomy;2013-05-23
4. Characterization of Arsenic Ultra-Shallow Junctions in Silicon Using Photocarrier Radiometry and Spectroscopic Ellipsometry;International Journal of Thermophysics;2012-08-31
5. Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers;Chinese Physics B;2010-09
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