GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction-Reference-Cited by-同舟云学术

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GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction

Published:2015-09-14 Issue:10 Volume:118 Page:105307
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Orzali Tommaso,Vert Alexey,O'Brien Brendan,Herman Joshua L.,Vivekanand Saikumar,Hill Richard J. W.,Karim Zia,Papa Rao Satyavolu S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4930594

Reference30 articles.

1. Hybrid III-V semiconductor/silicon nanolaser

2. III-V/Si hybrid photonic devices by direct fusion bonding

3. Nanometre-scale electronics with III–V compound semiconductors

4. III–V field effect transistors for future ultra-low power applications

5. M. Heyns et al., in Proceedings of International Electron Devices Meeting (IEDM), 2011, p. 13.1.1.

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