Ferroelectric transistors with improved characteristics at high temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3467471
Reference16 articles.
1. Design of SOI CMOS operational amplifiers for applications up to 300°C
2. High-temperature electronics - a role for wide bandgap semiconductors?
3. Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application
4. Temperature effects on trigate SOI MOSFETs
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