Reflection high‐energy electron diffraction observation of GaAs surface‐prepared ultrasonic running de‐ionized water treatment
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104764
Reference21 articles.
1. GaAs cleaning with a hydrogen radical beam gun in an ultrahigh-vacuum system
2. Cleaning of MBE GaAs Substrates by Hydrogen Radical Beam Irradiation
3. Surface composition and structure changes in GaAs compounds due to low‐energy Ar+ ion bombardment
4. Growth of III–V semiconductors by molecular beam epitaxy and their properties
5. Dry, laser‐assisted rapid HBr etching of GaAs
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