GaAs surface wet cleaning by a novel treatment in revolving ultrasonic atomization solution-Reference-Cited by-同舟云学术

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GaAs surface wet cleaning by a novel treatment in revolving ultrasonic atomization solution

Published:2010-03 Issue:3 Volume:31 Page:036002
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Zaijin Li,Liming Hu,Ye Wang,Ye Yang,Hangyu Peng,Jinlong Zhang,Li Qin,Yun Liu,Lijun Wang

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Reflection high‐energy electron diffraction observation of GaAs surface‐prepared ultrasonic running de‐ionized water treatment

2. Silicon surface wet cleaning and chemical oxide growth by a novel treatment in aqueous chlorine solutions

3. New reconstruction-stoichiometry correlation for GaAs(001) surface treated by atomic hydrogen

4. A Novel Method to Separate Organic Compounds Through Ultrasonic Atomization

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1. GaAs Microdisk Lasers with Al₂O₃ Passivation Selectively Grown on SOI;ACS Photonics;2024-08-21

2. Impact of GaAs(100) surface preparation on EQE of AZO/Al2O3/p-GaAs photovoltaic structures;Beilstein Journal of Nanotechnology;2021-06-28

3. (Invited) A Novel Approach to Clean Surface for High Mobility Channel Materials with In Situ Atomic Hydrogen Clean;ECS Transactions;2013-08-31

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