(Invited) A Novel Approach to Clean Surface for High Mobility Channel Materials with In Situ Atomic Hydrogen Clean

Abstract

A number of non-silicon channel materials have been considered for advanced CMOS devices such as SiGe, Ge and GeSn (PMOS) as well as various III-V materials combinations including InGaAs and GaAs (NMOS). Surfaces cleaning process is critical to make a better interface contact in devices. This study demonstrates a method of surface cleaning on Ge/III-V channel using thermal atomic hydrogen source. This technique has several advantages over conventional wet, thermal, or plasma cleaning such as lower temperatures, no surface damage, less impurities, selective removal, and large area scalability. This will be a good candidate technology for the future non-Si CMOS technology beyond 10 nm node with scalability to 450 mm wafer size.