Recombination dynamics of carriers in an InGaN/AlGaN single-quantum-well light-emitting diode under reverse-bias voltages
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126091
Reference14 articles.
1. Luminescences from localized states in InGaN epilayers
2. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
3. Optical transitions in InxGa1−xN alloys grown by metalorganic chemical vapor deposition
4. Radiative recombination lifetime measurements of InGaN single quantum well
5. Intra- and interwell transitions in GaInN/GaN multiple quantum wells with built-in piezoelectric fields
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2. Enhancement of radiative recombination time under forward bias voltage in a green (In,Ga)N multiple-quantum-well light-emitting-diode;physica status solidi (c);2011-04-21
3. Effects of bias on cathodoluminescence in ZnCdSe quantum well light emitting diodes;Journal of Applied Physics;2008-12
4. Self-consistent modeling of resonant PL in InGaN SQW LED-structure;Light-Emitting Diodes: Research, Manufacturing, and Applications XI;2007-02-08
5. Measurement of the internal quantum efficiency of InGaN quantum wells;Light-Emitting Diodes: Research, Manufacturing, and Applications XI;2007-02-08
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