Intra- and interwell transitions in GaInN/GaN multiple quantum wells with built-in piezoelectric fields
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122958
Reference10 articles.
1. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
2. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
3. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
4. Recombination dynamics of localized excitons inIn0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells
5. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
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