Enhancement of conduction‐band effective mass in III–V semiconductor alloys induced by chemical disorder
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363804
Reference21 articles.
1. Plasma Edge Reflectance Measurements in GaxIn(1−x)As and InAsxSb(1−x) Alloys
2. An experimental determination of the effective masses for GaxIn1−xAsyP1−yalloys grown on InP
3. Compositional dependence of effective masses in n-type GaxIn1−xAs alloys using submillimeter cyclotron resonance
4. Cyclotron resonance inn‐type In1−xGaxAsyP1−y
5. Effective masses and evidence for alloy disorder effects in GaxIn1−xAsyP1−y investigated by shallow donor photoconductivity
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