Analysis of In<sub>0.53</sub>Ga<sub>0.47</sub>As n-MOSFET Characteristics using Quantum Drift Diffusion Model
Author:
Affiliation:
1. Graduate School of Science and Technology, Kyoto Institute of Technology
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering
Link
https://www.jstage.jst.go.jp/article/ieejeiss/143/2/143_159/_pdf
Reference15 articles.
1. (1) “5nm Technology”, https://www.tsmc.com/english/dedicatedFoundry/technology/logic/l_5nm (2021)
2. (2) M. H. Na : “CMOS and beyond CMOS Technologies for Edge Intelligence”, VLSI 2020, Friday Forum, Topic.4 (2020)
3. (3) J. H. Choi, Y. Mao, and J. P. Chang : “Development of hafnium based high-k materials—A review”, Materials Science and Engineering R, Vol. 72, Issue 6, pp. 97-136 (2011)
4. (4) K. C. Saraswat, C. O. Chui, D. Kim, T. Krishnamohan, and A. Pethe : “High Mobility Materials and Novel Device Structures for High Performance Nanoscale MOSFETs”, 2006 International Electron Devices Meeting, pp. 1-4 (2006)
5. (5) 福田 昭：「次々世代のトランジスタを狙う非シリコン材料」, EE Times Japan (2015)
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1. Investigation of Threshold Voltage Definition for Nanosheet MOSFETs by Using Quantum Drift Diffusion Model;IEEJ Transactions on Electronics, Information and Systems;2024-02-01
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