High-resolution characterization of ultrashallow junctions by measuring in vacuum with scanning spreading resistance microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2736206
Reference6 articles.
1. CMOS design near the limit of scaling
2. 10–15 nm Ultrashallow Junction Formation by Flash-Lamp Annealing
3. Extended Abstracts of the 2005 IEEE International Workshop on Junction Technology;Tsujii H.
4. Sub-5-nm-spatial resolution in scanning spreading resistance microscopy using full-diamond tips
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