Molecular beam epitaxy of GaN on 2H–MoS2

Author:

Lee Choong Hee1ORCID,Zhang Yuewei2ORCID,Johnson Jared M.3ORCID,Koltun Rachel4,Gambin Vincent4ORCID,Jamison John S.3,Myers Roberto C.3ORCID,Hwang Jinwoo3,Rajan Siddharth1

Affiliation:

1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

2. Materials Department, University of California, Santa Barbara, California 93106, USA

3. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA

4. NG Next, Northrop Grumman Corporation, Redondo Beach, California 90278, USA

Funder

National Science Foundation

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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