Molecular beam epitaxy of GaN on 2H–MoS2-Reference-Cited by-同舟云学术

Molecular beam epitaxy of GaN on 2H–MoS2

Published:2020-09-21 Issue:12 Volume:117 Page:123102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Choong Hee¹^ORCID,Zhang Yuewei²^ORCID,Johnson Jared M.³^ORCID,Koltun Rachel⁴,Gambin Vincent⁴^ORCID,Jamison John S.³,Myers Roberto C.³^ORCID,Hwang Jinwoo³,Rajan Siddharth¹

Affiliation:

1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

2. Materials Department, University of California, Santa Barbara, California 93106, USA

3. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA

4. NG Next, Northrop Grumman Corporation, Redondo Beach, California 90278, USA

Funder

National Science Foundation

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0012682

Reference20 articles.

1. MoS2/Si Heterojunction with Vertically Standing Layered Structure for Ultrafast, High-Detectivity, Self-Driven Visible-Near Infrared Photodetectors

2. In Situ Fabrication of Vertical Multilayered MoS2/Si Homotype Heterojunction for High-Speed Visible-Near-Infrared Photodetectors

3. Electrical and photovoltaic characteristics of MoS2/Si p-n junctions

4. Long-Lived Emission in Type-II CdS/ZnSe Core/Crown Nanoplatelet Heterostructures

5. Van der Waals epitaxial growth of vertically stacked Sb2Te3/MoS2 p–n heterojunctions for high performance optoelectronics

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