Electrical and photovoltaic characteristics of MoS2/Si p-n junctions-Reference-Cited by-同舟云学术

Electrical and photovoltaic characteristics of MoS2/Si p-n junctions

Published:2015-03-21 Issue:11 Volume:117 Page:114502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hao Lanzhong¹,Liu Yunjie¹,Gao Wei¹,Han Zhide¹,Xue Qingzhong¹,Zeng Huizhong²,Wu Zhipeng²,Zhu Jun²,Zhang Wanli²

Affiliation:

1. College of Science, China University of Petroleum, Qingdao, Shandong 266580, People's Republic of China

2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China

Funder

Fundamental Research Funds for the Central University

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4915951

Reference29 articles.

1. Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials

2. GaS and GaSe Ultrathin Layer Transistors

3. How Good Can Monolayer MoS2 Transistors Be?

4. Epitaxial Monolayer MoS2 on Mica with Novel Photoluminescence

5. Atomically ThinMoS2: A New Direct-Gap Semiconductor

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