Affiliation:
1. Functional Materials & Devices Laboratory, Department of Electrical Engineering, IIT Delhi 1 , New Delhi, NCT 110 016, India
2. Quazar Technologies Private Limited 2 , New Delhi, NCT 110 017, India
Abstract
Transition metal dichalcogenides like WS2 exhibit technologically relevant optoelectronic properties. In this work, we report on the growth of two-dimensional tungsten disulfide of various geometries and morphologies using a custom atmospheric pressure chemical vapor deposition system. In triangular flakes, a maximum edge length of ∼110 μm (for multilayer) and ∼60 μm (for monolayer) was observed optically. Energy dispersive x-ray analysis yielded a W:S ratio close to a 1:2 stoichiometry. Two sets of intensity ratios (2LA(M)A1g), derived from Raman measurements, were found: ∼2.15 and ∼0.56, corresponding, respectively, to monolayer and multilayer growth of WS2. Photoluminescence measurements yield peaks at ∼640 and ∼660 nm, with the former peak (assigned to monolayer growth) exhibiting a ∼20-fold enhancement with respect to the latter (multilayer growth), suggesting a radiatively more efficient direct bandgap. It is expected that the process will lead to advancements in the growth of large-area two-dimensional transition metal dichalcogenides for device applications.
Funder
Ministry of Education, India
Indian Institute of Technology Delhi
Department of Science and Technology, Ministry of Science and Technology, India
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics