Asymmetric strain distributions resulting from deliberately induced misfit dislocations
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103054
Reference7 articles.
1. The effects of misfit dislocation nucleation and propagation on Si/Si1-xGex critical thickness values
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4. The interpretation of dislocation contrast in x‐ray topographs of GaAs1−x Px
5. Tetragonal and monoclinic forms of GexSi1−xepitaxial layers
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1. Detailed X-ray diffraction studies on optically pumped mid-infrared InAs/Ga(In)Sb/AlSb type-II lasers;Journal of Crystal Growth;2003-09
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