Dislocation nucleation and propagation in Si0.95Ge0.05layers on silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101212
Reference7 articles.
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2. Erratum: Relaxation of strained‐layer semiconductor structures via plastic flow [Appl. Phys. Lett. 51, 1325 (1987)]
3. Critical Stresses forSixGe1−xStrained-Layer Plasticity
4. Defects in epitaxial multilayers
5. Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures [Appl. Phys. Lett. 47, 322 (1985)]
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