Bias voltage dependence of tunnel magnetoimpedance in AlOx-based magnetic tunnel junctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3556755
Reference15 articles.
1. Origin of Magnetization Decay in Spin-Dependent Tunnel Junctions
2. Quantum Well States in Spin-Dependent Tunnel Structures
3. Current-driven excitation of magnetic multilayers
4. Emission of spin waves by a magnetic multilayer traversed by a current
5. Frequency-dependent magnetoresistance and magnetocapacitance properties of magnetic tunnel junctions with MgO tunnel barrier
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1. Voltage-induced Magnetocapacitance Effect in Magnetic Tunnel Junctions;Materia Japan;2020-04-01
2. Inverse Tunnel Magnetocapacitance in Fe/Al-oxide/Fe3O4;Scientific Reports;2017-06-01
3. Large magnetocapacitance effect in magnetic tunnel junctions based on Debye-Fröhlich model;Applied Physics Letters;2015-09-28
4. Effect of thermal annealing on the ac impedance of Co(75)/Al2O3(2.3)/Co(5.0)/Al2O3(2.3)/Co(50) double-barrier MTJs;Current Applied Physics;2014-10
5. The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier;Applied Physics Letters;2014-06-02
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