The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier-Reference-Cited by-同舟云学术

The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier

Published:2014-06-02 Issue:22 Volume:104 Page:222406
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Volkov N. V.¹²,Tarasov A. S.¹,Smolyakov D. A.¹,Gustaitsev A. O.¹²,Balashev V. V.³⁴,Korobtsov V. V.³⁴

Affiliation:

1. Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660036, Russia

2. Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk 660041, Russia

3. Institute of Automation and Control Processes, Russian Academy of Sciences, Far East Branch, Vladivostok 690041, Russia

4. School of Natural Sciences, Far Eastern Federal University, Vladivostok 690950, Russia

Funder

Russian Foundation for Basic Research

Russian Foundation for Basic Research (RFBR)

Russian Ministry of Education and Science

Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4881715

Reference20 articles.

1. Magneto‐impedance effect in NiFe plated wire

2. Giant magnetoimpedance materials: Fundamentals and applications

3. Enhanced giant magnetoimpedance effect and field sensitivity in Co-coated soft ferromagnetic amorphous ribbons

4. Physical models of magnetoimpedance

5. Longitudinal and transverse magneto‐impedance in amorphous Fe73.5Cu1Nb3Si13.5B9 films

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